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3D V-NAND overcomes problems such as interference that will keep conventional NAND from achieving greater density, said E.S. Jung, executive vice president of the company但ﾂ�ﾂ冱 semiconductor R&D center. The latest NAND flash chips are manufactured with cells less than 20 nanometers across, and some experts believe it will be hard to take them below 10nm. 3D V-NAND opens the door to further increases in density, Samsung says.
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